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11
Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition
Crystallization and Electrical Properties of SBN60 Thin Films Prepared by Ion Beam Sputter Deposition
Jae Hoon Jang, | 한국전기전자재료학회 | 2005 ,
12
SBR 공정에서 유입수 주입방식과 비 포기 유입수 주입시간이 탈질효율과 슬러지 침강성에 미치는 영향
SBR 공정에서 유입수 주입방식과 비 포기 유입수 주입시간이 탈질효율과 슬러지 침강성에 미치는 영향
이상민(Sang Min Lee), | 대한환경공학회 | 2005 ,
13
단일 및 가변형 SBR 공법의 영양염류 처리효율 및 "상"전환속도 평가
단일 및 가변형 SBR 공법의 영양염류 처리효율 및 "상"전환속도 평가
김만수(Man Soo Kim), | 대한환경공학회 | 2005 ,
14
Two-sludge 유형 SBR 공정의 최적 운영 조건 도출
Two-sludge 유형 SBR 공정의 최적 운영 조건 도출
류홍덕(Hong Duck Ryu), | 대한환경공학회 | 2007 ,
15
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Byoungchul Park, | 한국물리학회 | 2007 ,
16
Preparation of Transparent Conducting Ga-Doped ZnO and Al-doped ZnO Bilayers by Using r.f. Magnetron Sputtering with ZnO Buffer Layers on Polymer Substrates
Preparation of Transparent Conducting Ga-Doped ZnO and Al-doped ZnO Bilayers by Using r.f. Magnetron Sputtering with ZnO Buffer Layers on Polymer Substrates
Chongmu Lee, | 한국물리학회 | 2007 ,
17
Deposition Characteristics of Co Thin Films over High Aspect Ratio Trenches by MOCVD Using CO₂(CO)8 as a Precursor
Deposition Characteristics of Co Thin Films over High Aspect Ratio Trenches by MOCVD Using CO₂(CO)8 as a Precursor
J. Lee, | 한국물리학회 | 2007 ,
18
Principles of Certification for High-Precision Optical Parts and Systems Based on a Diffraction Interferometer
Principles of Certification for High-Precision Optical Parts and Systems Based on a Diffraction Interferometer
Kyeong-Hee Lee, | 한국물리학회 | 2006 ,
19
High-Temperatur Thermoelectric Properties of Sb-Containging (ZnO)m(In₁-xSbx)₂O₃(0≤ x ≤ 0.1)
High-Temperatur Thermoelectric Properties of Sb-Containging (ZnO)m(In₁-xSbx)₂O₃(0≤ x ≤ 0.1)
K. Park, | 한국물리학회 | 2006 ,
20
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
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