서브메뉴
검색
Deposition Characteristics of Co Thin Films over High Aspect Ratio Trenches by MOCVD Using CO₂(CO)8 as a Precursor
Deposition Characteristics of Co Thin Films over High Aspect Ratio Trenches by MOCVD Using CO₂(CO)8 as a Precursor
상세정보
MARC
008101014s2007 ulka a eng■022 ▼a03744884
■1001 ▼aJ. Lee
■24510▼aDeposition Characteristics of Co Thin Films over High Aspect Ratio Trenches by MOCVD Using CO₂(CO)8 as a Precursor▼dJ. Lee▼eJ. G. Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. S697-S702
■7001 ▼aJ. G. Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 supplementary isssu III.(2006.12)▼d2007, 01
■SIS ▼aS036912▼b60077342▼h8▼s2▼fP


