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221 Results:AA:D C OH 0.203 sec.
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121
Electrical and Optical Properties of a GaN n+-p JUnction with High-Energy Electron Irradiation
Electrical and Optical Properties of a GaN n+-p JUnction with High-Energy Electron Irradiation
Dong Uk Lee, | 한국물리학회 | 2007 ,
122
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
Calculation of the Tunneling Current and the Noise for a Radio-Frequency Single Electron Transistor Based on a Green's function Approach
J. H. Oh, | 한국물리학회 | 2007 ,
123
UV-Ozone Surface Treatment of Indium-Tin-Oxide In Organic Light Emitting Diodes
UV-Ozone Surface Treatment of Indium-Tin-Oxide In Organic Light Emitting Diodes
Byoung-Sang Kim, | 한국물리학회 | 2007 ,
124
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Electron and Hole Storage in a Floating Gate consisting of si Nanocrystals Embedded in a SiO₂Layer
Do-Hyun Oh, | 한국물리학회 | 2007 ,
125
Measurement of the Beam Power Transmission in the KSTAR Neutral Beam Test-Stand System
Measurement of the Beam Power Transmission in the KSTAR Neutral Beam Test-Stand System
Doo-Hee Chang, | 한국물리학회 | 2007 ,
126
Structural Design of ITER ToKamak In-Pit Assembly Tools
Structural Design of ITER ToKamak In-Pit Assembly Tools
Kihak Im, | 한국물리학회 | 2006 ,
127
Structural Design of ITER Tokamak Sub-Assembly Tools
Structural Design of ITER Tokamak Sub-Assembly Tools
Kihak Im, | 한국물리학회 | 2006 ,
128
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
Study on the Discharge Characteristics of a Prototype Ion Source for the KSTAR Neutral Beam system Depending on Filament Configurations
B. H. Oh, | 한국물리학회 | 2006 ,
129
Joint Development for KSTAR CS Coil
Joint Development for KSTAR CS Coil
K. Park, | 한국물리학회 | 2006 ,
130
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
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