신경주학교 도서관

11 Results:SS:GAAS 0.62 sec.

Formation of InAs/GaAs Quantum Dots by Alternate Growth of InAs and GaAs with a Quasi-Monolayer Thickness
Jong Su Kim., | 한국물리학회 | 2006 ,

Threshold Current Density of 1.3-㎛ GaAsSbN/GaAs Quantum-Well Lasers
Seoung-hwan Park., | 한국물리학회 | 2006 ,

Optically Excited Terahertz Emission from Low-Temperature-Hrown GaAs
Shinho Cho., | 한국물리학회 | 2006 ,

Electronic Properties of 1.3μm GaAsSbN/GaAs Quantum-Well Structure
Park, Seoung-hwan, | 한국물리학회 | 2006 ,

Well-Width Dependence of the Threshold Current Density of Type-Ⅱ GaAsSb/GaAs Quantum Well Lasers
Kim, Jong-jae, | 한국물리학회 | 2006 ,

Barrier-Width Effects on Electronic and Optical Properties of type-Ⅱ GaAsSb/GaAs/AlGaAs Quantum-Well Lasers
Park, Seoung-hwan Park,, | 한국물리학회 | 2006 ,

Three-Temperature Modeling of Carrier-Phonon Interactions in Thin GaAs Film Structures Irradiated by Picosecond Pulse Lasers
Seong Hyuk Lee., | 대한기계학회 | 2006 ,

Manufacturing of GaAs MMICs for Wireless Communications Applications
Wu-Jing Ho., | 대한전자공학회 | 2006 ,

Molecular Beam Epitaxy of InAs/AlSb HFET's onSi and GaAs substrates
Jae-Eung Oh., | 대한전자공학회 | 2006 ,

Hydrogen Ion Implantation Mechanism in GaAs-on-insulator Wafer Fomation by Ion-cut Process
Hyung-Joo Woo., | 대한전자공학회 | 2006 ,