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Electronic Properties of 1.3μm GaAsSbN/GaAs Quantum-Well Structure
Electronic Properties of 1.3μm GaAsSbN/GaAs Quantum-Well Structure
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 서명/저자
- Electronic Properties of 1.3μm GaAsSbN/GaAs Quantum-Well Structure / Seoung-hwan Park 저
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 472-475
- Control Number
- kjul:60096654
MARC
008070406s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aPark, Seoung-hwan
■245 ▼aElectronic Properties of 1.3μm GaAsSbN/GaAs Quantum-Well Structure▼dSeoung-hwan Park 저
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 472-475
■653 ▼aELECTRONIC▼aPROPERTIES▼a1.3μM▼aGAASSBNGAAS▼aQUANTUMWELL▼aSTRUCTURE
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 3 (2006. 3)▼d2006, 03
■■URL ▼ahttp://www.kps.or.kr
