본문

  1. Home
18 Results:SS:BARRIER 0.62 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
1
Calculation of the Crossing Time Through the Fitness Barrier in the Mutation-Selection Model by Using a Computer Simulation
Calculation of the Crossing Time Through the Fitness Barrier in the Mutation-Selection Model by Using a Computer Simulation
Wonpyong Gill., | 한국물리학회 | 2006 ,
2
Noise Barrier with Top Cylindrical Yubes
Noise Barrier with Top Cylindrical Yubes
Sung Soo Jung., | 한국물리학회 | 2006 ,
3
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
4
Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with ion Beam-Oxidized Barriers
Fabrication of Ultrasmall All-Nb Tunnel-Junction Devices with ion Beam-Oxidized Barriers
Hyunsik Im., | 한국물리학회 | 2006 ,
5
Characterization of the Magnetic Tunnel Junction with an AlOx Barrier Fabricated by Using Tilted Plasma Oxidation
Characterization of the Magnetic Tunnel Junction with an AlOx Barrier Fabricated by Using Tilted Plasma Oxidation
Chunghee Nam., | 한국물리학회 | 2006 ,
6
Asymmetric Magnetoresistance in a Double Magnetic Barrier Device
Asymmetric Magnetoresistance in a Double Magnetic Barrier Device
Joo, Sungjung, | 한국물리학회 | 2006 ,
7
Barrier-Width Effects on Electronic and Optical Properties of type-Ⅱ GaAsSb/GaAs/AlGaAs Quantum-Well Lasers
Barrier-Width Effects on Electronic and Optical Properties of type-Ⅱ GaAsSb/GaAs/AlGaAs Quantum-Well Lasers
Park, Seoung-hwan Park,, | 한국물리학회 | 2006 ,
8
SF6 and O₂effects on PR ashing in N₂Atmosphericdielectric barrier discharge
SF6 and O₂effects on PR ashing in N₂Atmosphericdielectric barrier discharge
Jeong, Soo-Yeon, | 한국전기전자재료학회 | 2007 ,
9
Pre-Annealing Effect of Electroless Ni-B Deposit as a Diffusion Barrier for Electroplated Cu Electrodes
Pre-Annealing Effect of Electroless Ni-B Deposit as a Diffusion Barrier for Electroplated Cu Electrodes
Jae Woong Choi, Gil Ho Hwang, Won Kyu Han, Sung G, | Korean Institute of Metals and Materials | 2006 ,
10
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
처음12이후마지막