본문

  1. Home
1000 Results:AA:J O CHA 0.484 sec.
RSS 
Multilingual
 Расширенный поиск
 Новый поиск книги прибытия
Selected Print Select Export to Excel
931
Electrical Properties of BiFeO₃-Doped PZT Thin Films for Embedded FeRAM Devices
Electrical Properties of BiFeO₃-Doped PZT Thin Films for Embedded FeRAM Devices
Chang Young Koo, | 한국물리학회 | 2007 ,
932
Neutral Beam Injector System for Steady State Tokamak-1
Neutral Beam Injector System for Steady State Tokamak-1
S. K. Mattoo, | 한국물리학회 | 2006 ,
933
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Bonghyun Park, | 한국물리학회 | 2007 ,
934
Fabrication and Characterization of Nano-Hole-Arrayed Pt Electrode on Silicon for CMOS Integrated Non-Disposable Biosensor Applications
Fabrication and Characterization of Nano-Hole-Arrayed Pt Electrode on Silicon for CMOS Integrated Non-Disposable Biosensor Applications
Hye-Kyoung Seo, | 한국물리학회 | 2007 ,
935
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Characterization and Improvement of Reverse Leakage Current of Shallow Silicided Junction for Sub-100 nm CMOS TEchnology Utilizing N₂PAI
Kyong-Jin Hwang, | 한국물리학회 | 2007 ,
936
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Seung-Hwan Song, | 한국물리학회 | 2007 ,
937
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Fabrication and Characteristics of 01.12 ㎛ single and couble-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim, | 한국물리학회 | 2007 ,
938
Electrical and Reliability Characteristics of HfO₂ MOS Capacitor with Mo Metal Gate Electrode
Electrical and Reliability Characteristics of HfO₂ MOS Capacitor with Mo Metal Gate Electrode
In-Sung Park, | 한국물리학회 | 2007 ,
939
Characterization of Sputter-Deposited SrZrO₃ : Cr Films on Si Substrates for Commercial Memory Device Applications
Characterization of Sputter-Deposited SrZrO₃ : Cr Films on Si Substrates for Commercial Memory Device Applications
Jae-Wan Park, | 한국물리학회 | 2007 ,
940
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Tae Su Oh, | 한국물리학회 | 2007 ,
처음이전89909192939495969798이후마지막