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841
Increase of the Light Extraction Efficiency in InGaN-Based Light-Emitting Diodes Integrated with Microlens Arrays Made of UV-Curable Optical Adhesive
Increase of the Light Extraction Efficiency in InGaN-Based Light-Emitting Diodes Integrated with Microlens Arrays Made of UV-Curable Optical Adhesive
Su-Gwang Son, | 한국물리학회 | 2007 ,
842
Resonance Frequency Shift of a Two-Level Atom in a Pulsed Optical Trap
Resonance Frequency Shift of a Two-Level Atom in a Pulsed Optical Trap
Jai Min Choi, | 한국물리학회 | 2007 ,
843
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Kwang Joo Kim, | 한국물리학회 | 2007 ,
844
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Jung-Hui Lee, | 한국물리학회 | 2007 ,
845
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Yun Hye Cho, | 한국물리학회 | 2007 ,
846
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Youngsook Jeon, | 한국물리학회 | 2007 ,
847
Characteristics of Conductive Amorphous Carbon (a-C) Films Prepared by Using the Magnetron Sputtering Method
Characteristics of Conductive Amorphous Carbon (a-C) Films Prepared by Using the Magnetron Sputtering Method
Yong Seob Park, | 한국물리학회 | 2007 ,
848
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
Mungi Park, | 한국물리학회 | 2007 ,
849
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Sunghyun Hwang, | 한국물리학회 | 2007 ,
850
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Mungi Park, | 한국물리학회 | 2007 ,
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