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741
Key Features in the Assembly of the KSTAR TF Magnets
Key Features in the Assembly of the KSTAR TF Magnets
K. M. Kim, | 한국물리학회 | 2006 ,
742
Curret Status of the KSTAR TF Superconducting Magnet Development
Curret Status of the KSTAR TF Superconducting Magnet Development
B. S. Lim, | 한국물리학회 | 2006 ,
743
Electrical Insulation of KSTAR Magnet Lead
Electrical Insulation of KSTAR Magnet Lead
W. Chung, | 한국물리학회 | 2006 ,
744
Bixpectral Analysis of the ion Saturation Currents Measured at the Boundary of the Hanbit Mirror Plasma
Bixpectral Analysis of the ion Saturation Currents Measured at the Boundary of the Hanbit Mirror Plasma
Chang-Mo Ryu, | 한국물리학회 | 2006 ,
745
First Results of the Kinetic Stabilizer in the Habit Tandem Mirror
First Results of the Kinetic Stabilizer in the Habit Tandem Mirror
A. C. England, | 한국물리학회 | 2006 ,
746
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
Scanning force Microscopy of Relaxor Ferroelectric PbMg⅓Nb⅔O₃-PbTiO₃Thin films for Piezoelectric Sensors
J. H. Lee, | 한국물리학회 | 2007 ,
747
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Effective Electrochemical Gating of Hole Transport in Aligned Single-Walled Carbon Nanotube Network Thin film Transistors
Bonghyun Park, | 한국물리학회 | 2007 ,
748
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
Nickel-Based Germanosilicide of n+-Si0.83Ge0.17For Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, | 한국물리학회 | 2007 ,
749
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Negative Differential Transconductance Characteristics and Inter-Band Tunneling Mechanism of Fabricated FITETs
Seung-Hwan Song, | 한국물리학회 | 2007 ,
750
Fabrication of Reliable Self-Aligned InP/InGaAs/InP double Heterojunction Bipolar Transistor with Hexagonal Emitter mesa Structure
Fabrication of Reliable Self-Aligned InP/InGaAs/InP double Heterojunction Bipolar Transistor with Hexagonal Emitter mesa Structure
Byoung-Gue Min, | 한국물리학회 | 2007 ,
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Organisation for Economic Cooperation & Development [, ]