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731
Development of Fabrication and Qualification Methods for the First Wall of the International Thermonuclear Experimental Reactor
Development of Fabrication and Qualification Methods for the First Wall of the International Thermonuclear Experimental Reactor
Dong Won Lee, | 한국물리학회 | 2007 ,
732
Synthesis of Ceramic Protective Coatings for Chemical Plant Parts Operated in Hi-temperature and Corrosive/Erosive Environment
Synthesis of Ceramic Protective Coatings for Chemical Plant Parts Operated in Hi-temperature and Corrosive/Erosive Environment
M.C. Son, | 한국부식방식학회(구)한국부식학회 | 2005 ,
733
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Kwang Joo Kim, | 한국물리학회 | 2007 ,
734
Corrosion Rate of Buried Pipeline by Alternating Current
Corrosion Rate of Buried Pipeline by Alternating Current
H. S. Song, | 한국부식방식학회(구)한국부식학회 | 2005 ,
735
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Yun Hye Cho, | 한국물리학회 | 2007 ,
736
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Youngsook Jeon, | 한국물리학회 | 2007 ,
737
Characteristics of Conductive Amorphous Carbon (a-C) Films Prepared by Using the Magnetron Sputtering Method
Characteristics of Conductive Amorphous Carbon (a-C) Films Prepared by Using the Magnetron Sputtering Method
Yong Seob Park, | 한국물리학회 | 2007 ,
738
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
Mungi Park, | 한국물리학회 | 2007 ,
739
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Sunghyun Hwang, | 한국물리학회 | 2007 ,
740
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Mungi Park, | 한국물리학회 | 2007 ,
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