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711
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
Dan An, Mun-Kyo Lee, Sang-Jin Lee, Du-Hyun Ko, Ji, | 대한전자공학회 | 2005 ,
712
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
713
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
714
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Wanjun Park, | 대한전자공학회 | 2002 ,
715
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
716
Solenoid Type 3-D Passives(Inductors and Trans formers) For Advanced Mobile Telecommuni-cation Systems
Solenoid Type 3-D Passives(Inductors and Trans formers) For Advanced Mobile Telecommuni-cation Systems
Jae Y. Park, | 대한전자공학회 | 2002 ,
717
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
On-chip Smart Functions for Efficiency Enhancement of MMIC Power Amplifiers for W-CDMA Handset Applications
Youn S. Noh, | 대한전자공학회 | 2003 ,
718
CCD Image Sensor with Variable Rest Operation
CCD Image Sensor with Variable Rest Operation
Sangsik Park, | 대한전자공학회 | 2003 ,
719
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Novel Robust Structure and High k Dielectric Material for 90 nm DRAM Capacitor
Y.K. Park, | 대한전자공학회 | 2003 ,
720
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
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