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61
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Selective Area Growth and Properties of Truncated-Pyramid InGaN/GaN MQW Structure on Si(111) Substrate with Various Filling Ratios
Tae Su Oh, | 한국물리학회 | 2007 ,
62
An Analysis of Boundary Effects of Regionally Applied Modified Illumination with DOE at the Back Surface of a Photomask
An Analysis of Boundary Effects of Regionally Applied Modified Illumination with DOE at the Back Surface of a Photomask
Woo-Jung Kim, | 한국물리학회 | 2007 ,
63
Thermal Stability and Adhesion Improvement of Cu(Ag)/Mo Bilayer Metallization in Large-Area TFT-LCDs
Thermal Stability and Adhesion Improvement of Cu(Ag)/Mo Bilayer Metallization in Large-Area TFT-LCDs
H. M. Lee, | 한국물리학회 | 2007 ,
64
Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
Isolation Effect on Organic Thin Film Transistors for Low Hysteresis Characteristics
Jung Hun Lee, | 한국물리학회 | 2006 ,
65
Actuation Behavior of a Carbon Nanotube/Nafion™ IPMC Actuator Containing an Ionic LIquid
Actuation Behavior of a Carbon Nanotube/Nafion™ IPMC Actuator Containing an Ionic LIquid
Hyoung-Tae Lim, | 한국물리학회 | 2006 ,
66
Effects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy
Effects of the Annealing Temperature on the Electrical Properties of p-Type ZnO Films Grown on (0001) Sapphire Suvstrates by Using Atomic Layer Epitaxy
Chongmu Lee, | 한국물리학회 | 2006 ,
67
Effect of Lattice Mismatch on the Properties of Self-Assembled InAs/InAlAs/InP Quantum Dots
Effect of Lattice Mismatch on the Properties of Self-Assembled InAs/InAlAs/InP Quantum Dots
B. H. Koo, | 한국물리학회 | 2006 ,
68
Polarized Optical Properties of a GaInP Lateral Superlattice
Polarized Optical Properties of a GaInP Lateral Superlattice
Kyoung-In Min, | 한국물리학회 | 2006 ,
69
Optical Spectra of Indium-Tin-Oxide Films Deposited ofn Flexible Colorless Polyimide Substrates
Optical Spectra of Indium-Tin-Oxide Films Deposited ofn Flexible Colorless Polyimide Substrates
Shinuk Cho, | 한국물리학회 | 2006 ,
70
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
Characteristics of SiOxNy Films Deposited by PECVD at Low-Temperatyre Using BTBAS-NH3-O2
June Hee Lee, | 한국물리학회 | 2006 ,
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