본문

  1. Home
1000 Results:AA:D Y KIM 0.874 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
551
Influence of Surface Plasmon Polaritons on Light Transmission Through Metallic Nanoslits
Influence of Surface Plasmon Polaritons on Light Transmission Through Metallic Nanoslits
Q-Han Park, | 한국물리학회 | 2006 ,
552
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Hyeong Joon Kim, | 한국물리학회 | 2006 ,
553
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Influence of Exygen on the Electrical Properties of Aluninum-Doped Zine-Oxide thin Films
Se-Hyun Kim, | 한국물리학회 | 2006 ,
554
Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics
Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics
Gi Heon Kim, | 한국물리학회 | 2006 ,
555
Observation of a Wavelength-Dependent Shift of the Extinction Angle of Polarizers in Spectroscopic Ellipsometry
Observation of a Wavelength-Dependent Shift of the Extinction Angle of Polarizers in Spectroscopic Ellipsometry
S. Y. Lee, | 한국물리학회 | 2006 ,
556
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Dependence of the DC, and the RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Y. W. Kim, | 한국물리학회 | 2006 ,
557
Electrical Characterization of Si Nanoparticles Embedded in SiO₂Thin Films
Electrical Characterization of Si Nanoparticles Embedded in SiO₂Thin Films
Yang Do Kim, | 한국물리학회 | 2006 ,
558
Fabrication and Electrical Characterization of a Floating Gate Capacitor with In₂O₃ Nano-Particles
Fabrication and Electrical Characterization of a Floating Gate Capacitor with In₂O₃ Nano-Particles
Dong Uk Lee, | 한국물리학회 | 2006 ,
559
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
560
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlｘGa₁-xAs Cladding Layer
kwang Woong Kim, | 한국물리학회 | 2006 ,
처음이전51525354555657585960이후마지막