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471
Nonvolatile Memory Properties of Thin Oxides with Single-and Multi-Layered Si Namocrystals Obtained by Ion Beam Sputtering
Nonvolatile Memory Properties of Thin Oxides with Single-and Multi-Layered Si Namocrystals Obtained by Ion Beam Sputtering
Sung Kim, | 한국물리학회 | 2006 ,
472
Development of a Blended Corrosion, Scale and Micro-Organism Inhibitor for Open Recirculating Cooling System
Development of a Blended Corrosion, Scale and Micro-Organism Inhibitor for Open Recirculating Cooling System
Dong-Jin Choi, | 한국부식방식학회(구)한국부식학회 | 2005 ,
473
Resonance Frequency Shift of a Two-Level Atom in a Pulsed Optical Trap
Resonance Frequency Shift of a Two-Level Atom in a Pulsed Optical Trap
Jai Min Choi, | 한국물리학회 | 2007 ,
474
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Variations of the Electronic, Optical and Magnetic Properties Caused by V Doping in Magnetite Thin Films
Kwang Joo Kim, | 한국물리학회 | 2007 ,
475
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Characteristics of Poly-SiGe Thin Films Prepared at Low Temperatures
Jung-Hui Lee, | 한국물리학회 | 2007 ,
476
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Study of the Tribological Properties of DLC Double-Layer Films Grown by Using Plasma enhanced Chemical-Vapor Deposition and Closed-Field Unbalanced Magnetron Sputtering
Yun Hye Cho, | 한국물리학회 | 2007 ,
477
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Tribological Properties of Ultrathin DLC Films with and without Metal Interlayers
Youngsook Jeon, | 한국물리학회 | 2007 ,
478
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
New Graded Ge Condensation Method for Formation of Ge-on -Insulator Layer
Mungi Park, | 한국물리학회 | 2007 ,
479
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Sunghyun Hwang, | 한국물리학회 | 2007 ,
480
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Characterization of GOI-MISFET with a High-k Gate Dielectric and Metal Gate Fabricated by Using a New Graded Ge Condenstion Method
Mungi Park, | 한국물리학회 | 2007 ,
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