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441
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
Atomic Structure of a Metastable, c(2 × 2) Mn Surface Alloy on Pd(001)
S. H. Kim, | 한국물리학회 | 2006 ,
442
10-GHz Harmonically Mode-Locked Fiber Ring Laser Stabilized by Cavity Length Control for over 16 Hours
10-GHz Harmonically Mode-Locked Fiber Ring Laser Stabilized by Cavity Length Control for over 16 Hours
Young Min Jhon, | 한국물리학회 | 2006 ,
443
One-Step Implementation of Two-Qubit Quantum Logic Gates
One-Step Implementation of Two-Qubit Quantum Logic Gates
Jing Xu, | 한국물리학회 | 2006 ,
444
Electroreflectance and Photoluminescence Study on InGaN Alloys
Electroreflectance and Photoluminescence Study on InGaN Alloys
Jung-Won Yoon, | 한국물리학회 | 2006 ,
445
Optical Anisotropy of TiO₂and MgF₂ Thin Films Prepared by Glancing Angle Deposition
Optical Anisotropy of TiO₂and MgF₂ Thin Films Prepared by Glancing Angle Deposition
Seouk-Hoon Woo, | 한국물리학회 | 2006 ,
446
Supersonic, Rotating Accretion Flows around Black Holes in a Two-Dimensional Cylindrical Geometry
Supersonic, Rotating Accretion Flows around Black Holes in a Two-Dimensional Cylindrical Geometry
Seong-Jae Lee, | 한국물리학회 | 2006 ,
447
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Property ImProvement of Aluminum-Oxide Thin Films Deposited under Photon Radiation by Using Atomic Layer Deposition
Hyeong Joon Kim, | 한국물리학회 | 2006 ,
448
Determination of the Excition Recombination Zone in White OLEDs Based on a Blue Emitting Layer of 4'4-Bis(2,2'-Dipheny1 Viny1)-1,1'-Bipheny1
Determination of the Excition Recombination Zone in White OLEDs Based on a Blue Emitting Layer of 4'4-Bis(2,2'-Dipheny1 Viny1)-1,1'-Bipheny1
So-Young KIm, | 한국물리학회 | 2006 ,
449
Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics
Plastic-Based Organic Thin-Film Transistors with Thermally Cured Polymeric Gate Dielectrics
Gi Heon Kim, | 한국물리학회 | 2006 ,
450
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
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