본문

  1. Home
1000 Results:AA:SUN F 0.296 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
351
Regular Paper : Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch - up and Forward Blocking Characteristics
Regular Paper : Simulation of a Novel Lateral Trench Electrode IGBT with Improved Latch - up and Forward Blocking Characteristics
Ey Goo Kang, | 한국전기전자재료학회 | 2002 ,
352
Regular Paper : A Compact and Fast Measurement System for the Detection of Small Capacitance
Regular Paper : A Compact and Fast Measurement System for the Detection of Small Capacitance
Young Shin Woo, | 한국전기전자재료학회 | 2002 ,
353
Regular Paper : Phase Stability of Bi-2212 and Bi-2223 Thin Films Prepared by IBS Technique
Regular Paper : Phase Stability of Bi-2212 and Bi-2223 Thin Films Prepared by IBS Technique
Sung Ho Yang, | 한국전기전자재료학회 | 2002 ,
354
Regular Paper : Determination of the Inelastic Cross Sections for C3F8 Molecule by Electron Swarm Study
Regular Paper : Determination of the Inelastic Cross Sections for C3F8 Molecule by Electron Swarm Study
Byung Hoon Jeon, | 한국전기전자재료학회 | 2002 ,
355
Electrical Properties of ( Ba , Sr ) TiO3 Thin Films Deposited on RuO2 Electrode
Electrical Properties of ( Ba , Sr ) TiO3 Thin Films Deposited on RuO2 Electrode
Chi Sun Park, | 한국전기전자재료학회 | 2001 ,
356
LIGBT with Dual Cathode for Improving Breakdown Characteristics
LIGBT with Dual Cathode for Improving Breakdown Characteristics
Ey Goo Kang, | 한국전기전자재료학회 | 2001 ,
357
Temperature - Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN
Temperature - Dependent Photoluminescence from Er-implanted undoped and Mg-doped GaN
Sang Sig Kim, | 한국전기전자재료학회 | 2001 ,
358
Regular Paper / Optimal Sputtering Parameters of Transparent Conducting ITO Films Deposited on PET Substrates
Regular Paper / Optimal Sputtering Parameters of Transparent Conducting ITO Films Deposited on PET Substrates
Hyun Hoo Kim, | 한국전기전자재료학회 | 2001 ,
359
Regular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching
Regular Paper / A Study on Pumping Effect of Oxygen in Polysilicon Gate Etching
Nam Hoon Kim, | 한국전기전자재료학회 | 2001 ,
360
Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis
Polishing Mechanism of TEOS-CMP with High-temperature Slurry by Surface Analysis
Nam Hoon Kim, | 한국전기전자재료학회 | 2005 ,
처음이전31323334353637383940이후마지막