본문

  1. Home
266 Results:AA:S J BAE 0.234 sec.
RSS 
다국어입력
 상세검색
 신착검색
선택출력 선택엑셀내보내기
171
Radiation Hardness Study for Silicon Strip Sensors Using the 35-MeV Proton Beam from the MC-50 Cyclotron at the Korea Institute of Radiological and Medical Sciences
Radiation Hardness Study for Silicon Strip Sensors Using the 35-MeV Proton Beam from the MC-50 Cyclotron at the Korea Institute of Radiological and Medical Sciences
Jik Lee, | 한국물리학회 | 2006 ,
172
Design and Physics Issues of the PAL-XFEL
Design and Physics Issues of the PAL-XFEL
T.-Y. LEE, | 한국물리학회 | 2006 ,
173
The Dynamics of a Sonoluminescing Gas Bubble in an Acoustic Pressure Field
The Dynamics of a Sonoluminescing Gas Bubble in an Acoustic Pressure Field
Song Hyo Bae., | 한국물리학회 | 2006 ,
174
Single-Photon Counting in the 1550-nm Wavelength Region for Quantum Cryptography
Single-Photon Counting in the 1550-nm Wavelength Region for Quantum Cryptography
Chul-woo Park., | 한국물리학회 | 2006 ,
175
Acoustic Emission Source Analysis of Vacuum Plasma Sprayed CoNiCrAlY Coatings
Acoustic Emission Source Analysis of Vacuum Plasma Sprayed CoNiCrAlY Coatings
Ku-hyun Lee., | 한국물리학회 | 2006 ,
176
Titania Nanofibers Srepared by Electrospinning
Titania Nanofibers Srepared by Electrospinning
Deuk Yong Lee., | 한국물리학회 | 2006 ,
177
Optoelectrical Properties for CuAlSe₂ Epilayers Grown by Using a Hot Wall Epitaxy Method
Optoelectrical Properties for CuAlSe₂ Epilayers Grown by Using a Hot Wall Epitaxy Method
Seoungnam Baek., | 한국물리학회 | 2006 ,
178
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
179
Temperature-Eependent Raman Study of the Pyrochlore Superconductor Cd₂Re₂O7
Temperature-Eependent Raman Study of the Pyrochlore Superconductor Cd₂Re₂O7
J. S. Bae., | 한국물리학회 | 2006 ,
180
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Choi, Hoon, | 한국물리학회 | 2006 ,
처음이전13141516171819202122이후마지막