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121
Acoustic Emission Source Analysis of Vacuum Plasma Sprayed CoNiCrAlY Coatings
Acoustic Emission Source Analysis of Vacuum Plasma Sprayed CoNiCrAlY Coatings
Ku-hyun Lee., | 한국물리학회 | 2006 ,
122
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Wonjoon Choi., | 한국물리학회 | 2006 ,
123
Interface Analysis of an AlGaAs Multilayer System by Using Spectroscopic Ellipsometry
Interface Analysis of an AlGaAs Multilayer System by Using Spectroscopic Ellipsometry
T. H. Ghong., | 한국물리학회 | 2006 ,
124
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
Electrical Properties of the ZnO Nanowire Transistor and Its Analysis with Equivalent Circuit model
C. Y. Yim., | 한국물리학회 | 2006 ,
125
Understanding the Behaviors of Cu During a Post-Gate-Oxidation Device Process by Using an Isotope Tracking Analysis
Understanding the Behaviors of Cu During a Post-Gate-Oxidation Device Process by Using an Isotope Tracking Analysis
Sung-wook Lee., | 한국물리학회 | 2006 ,
126
Effect of Annealing Temperature on Binary TiO₂:SiO₂ Nanocrystalline Thin Films
Effect of Annealing Temperature on Binary TiO₂:SiO₂ Nanocrystalline Thin Films
F. Mei., | 한국물리학회 | 2006 ,
127
Analysis of Pentacene FET Characteristics Based on the Maxwell-Wagner Model
Analysis of Pentacene FET Characteristics Based on the Maxwell-Wagner Model
Eunju Lim., | 한국물리학회 | 2006 ,
128
Aging and Annealing Effects on the Magnetic Ordering Induced by Proton Irradiation in Graphite
Aging and Annealing Effects on the Magnetic Ordering Induced by Proton Irradiation in Graphite
K.H. Han., | 한국물리학회 | 2006 ,
129
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Annealing Effects on the Photoluminescence of Amorphous Silicon-Nitride Films
Changhun Ko., | 한국물리학회 | 2006 ,
130
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
The Structural Properties of GaN Grown on Si Substrates by Using Various Annealing Conditions for the AlN Buffer Layers
D. H. Shin., | 한국물리학회 | 2006 ,
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