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Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate
상세정보
- 자료유형
- 기사
- ISSN
- 15981657
- 저자명
- I-H.Kang
- 서명/저자
- Improved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate / I-H.Kang , 공저 J-W.Lee S-J. Kang, S-J Jo, S-K. In, H-J. Song, J-H.Kim, J-I.Song
- 발행사항
- 서울 : 대한전자공학회, 2003.
- 형태사항
- pp. 63-68
- 주기사항
- 참고문헌 수록
- 원문정보
- url
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60202505
MARC
008190108s2003 ulk aa eng■022 ▼a15981657
■1001 ▼aI-H.Kang
■24510▼aImproved Breakdown Voltage Characteristics of In0.5Ga0.5P/In0.22Ga0.78As/GaAs p-HEMT with an Oxidized GaAs Gate▼dI-H.Kang▼e공저 J-W.Lee S-J. Kang, S-J Jo, S-K. In, H-J. Song, J-H.Kim, J-I.Song
■260 ▼a서울▼b대한전자공학회▼c2003.
■300 ▼app. 63-68
■500 ▼a참고문헌 수록
■7001 ▼aJ-W.Lee S-J. Kang, S-J Jo, S-K. In, H-J. Song, J-H.Kim, J-I.Song
■773 ▼tJournal of Semiconductor Technology and Science▼gVolume 3, Number 2, (2003 June)▼d2003, 06
■856 ▼ahttp://www.jsts.org
■SIS ▼aS013698▼b60054120▼h8▼s2▼fP
