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Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl₂/N₂ and Cl₂/Ar Mixtures at Low Bias Power
Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl₂/N₂ and Cl₂/Ar Mixtures at Low Bias Power
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- J. W. Bae
- Title/Author
- Anisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl₂/N₂ and Cl₂/Ar Mixtures at Low Bias Power / J. W. Bae ; C. H. Jeong ; J. T. Lim ; H. C. Lee ; G. Y. Yeom ; I. Adesida
- Publish Info
- 서울 : 한국물리학회, 2007.
- Material Info
- pp. 1130-1135
- Added Entry-Personal Name
- C. H. Jeong
- Added Entry-Personal Name
- J. T. Lim
- Added Entry-Personal Name
- H. C. Lee
- Added Entry-Personal Name
- G. Y. Yeom
- Added Entry-Personal Name
- I. Adesida
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147731
MARC
008101209s2007 ulka a eng■022 ▼a03744884
■1001 ▼aJ. W. Bae
■24510▼aAnisotropic Etching of InP and InGaAs by Using an Inductively Coupled Plasma in Cl₂/N₂ and Cl₂/Ar Mixtures at Low Bias Power▼dJ. W. Bae▼eC. H. Jeong▼eJ. T. Lim▼eH. C. Lee▼eG. Y. Yeom▼eI. Adesida
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1130-1135
■7001 ▼aC. H. Jeong
■7001 ▼aJ. T. Lim
■7001 ▼aH. C. Lee
■7001 ▼aG. Y. Yeom
■7001 ▼aI. Adesida
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 4 (2007. 4)▼d2007, 04
■SIS ▼aS039453▼b60077342▼h8▼s2▼fP
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