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Spectroscopic Evidence for the Defect-Mediated Generation-recomvination Model for the Hole Capacitance fof Amorphous Silicon in a Metal-Insulator-Semiconductor Capacitor
Spectroscopic Evidence for the Defect-Mediated Generation-recomvination Model for the Hole Capacitance fof Amorphous Silicon in a Metal-Insulator-Semiconductor Capacitor
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Geuk-Jeong Bang
- 서명/저자
- Spectroscopic Evidence for the Defect-Mediated Generation-recomvination Model for the Hole Capacitance fof Amorphous Silicon in a Metal-Insulator-Semiconductor Capacitor / Geuk-Jeong Bang , Hyuk-Ryeol Park
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 681-684
- 기타저자
- Hyuk-Ryeol Park
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60147304
MARC
008101201s2007 ulka a eng■022 ▼a03744884
■1001 ▼aGeuk-Jeong Bang
■24510▼aSpectroscopic Evidence for the Defect-Mediated Generation-recomvination Model for the Hole Capacitance fof Amorphous Silicon in a Metal-Insulator-Semiconductor Capacitor▼dGeuk-Jeong Bang▼eHyuk-Ryeol Park
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 681-684
■7001 ▼aHyuk-Ryeol Park
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 3 (2007. 3)▼d2007, 03
■SIS ▼aS037722▼b60077342▼h8▼s2▼fP
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