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Effects of Annealing Temperature on the Characteristics of HfSiχOy-HfO₂ films Deposited for Metal-Insulator-Metal Capacitors by Using Atomic Layer Deposition
Effects of Annealing Temperature on the Characteristics of HfSiχOy-HfO₂ films Deposited for Metal-Insulator-Metal Capacitors by Using Atomic Layer Deposition
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- S.-W Jeong
- 서명/저자
- Effects of Annealing Temperature on the Characteristics of HfSiχOy-HfO₂ films Deposited for Metal-Insulator-Metal Capacitors by Using Atomic Layer Deposition / S.-W Jeong , Y. Roh
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1865-1868
- 기타저자
- Y. Roh
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60146326
MARC
008101110s2007 ulka a eng■022 ▼a03744884
■1001 ▼aS.-W Jeong
■24510▼aEffects of Annealing Temperature on the Characteristics of HfSiχOy-HfO₂ films Deposited for Metal-Insulator-Metal Capacitors by Using Atomic Layer Deposition▼dS.-W Jeong▼eY. Roh
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1865-1868
■7001 ▼aY. Roh
■773 ▼tJournal of The Korean Physical Society▼gVol. 50 No. 6 (2007. 6)▼d2007, 06
■SIS ▼aS040681▼b60077342▼h8▼s2▼fP
