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Physical and Electrical Characteristics of Atomic-Layer-deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄and SiH[N(CH₃)₂]₃ Precursors
Physical and Electrical Characteristics of Atomic-Layer-deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄and SiH[N(CH₃)₂]₃ Precursors
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- K. B. Chung
- Title/Author
- Physical and Electrical Characteristics of Atomic-Layer-deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄and SiH[N(CH₃)₂]₃ Precursors / K. B. Chung ; C. N. Whang ; M.-H. Cho ; C. J. Yim ; D.-H. Ko ; Y.-S. Kim ; M. J. Kim ; J.-H. Lee ; N. I. Lee
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 607-613
- Added Entry-Personal Name
- C. N. Whang
- Added Entry-Personal Name
- M.-H. Cho
- Added Entry-Personal Name
- C. J. Yim
- Added Entry-Personal Name
- D.-H. Ko
- Added Entry-Personal Name
- Y.-S. Kim
- Added Entry-Personal Name
- M. J. Kim
- Added Entry-Personal Name
- J.-H. Lee
- Added Entry-Personal Name
- N. I. Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60143990
MARC
008100928s2006 ulka a eng■022 ▼a03744884
■1001 ▼aK. B. Chung
■24510▼aPhysical and Electrical Characteristics of Atomic-Layer-deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄and SiH[N(CH₃)₂]₃ Precursors▼dK. B. Chung▼eC. N. Whang▼eM.-H. Cho▼eC. J. Yim▼eD.-H. Ko▼eY.-S. Kim▼eM. J. Kim▼eJ.-H. Lee▼eN. I. Lee
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 607-613
■7001 ▼aC. N. Whang
■7001 ▼aM.-H. Cho
■7001 ▼aC. J. Yim
■7001 ▼aD.-H. Ko
■7001 ▼aY.-S. Kim
■7001 ▼aM. J. Kim
■7001 ▼aJ.-H. Lee
■7001 ▼aN. I. Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 4 (2006. 4)▼d2006, 04
■SIS ▼aS028401▼b60077342▼h8▼s2▼fP
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