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Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Sunghyun Hwang
- 서명/저자
- Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications / Sunghyun Hwang , Sungwook Jung , Kyung-Soo Jang , Jeoung In Lee , Hyungjun Park , S.K.Dhungel , J.Yi , Ho-Kyoon Chung , Byong-Deog Choi , Ki-Young Lee
- 발행사항
- 서울 : 한국물리학회, 2007.
- 형태사항
- pp. 1096-1099
- 기타저자
- Sungwook Jung
- 기타저자
- Kyung-Soo Jang
- 기타저자
- Jeoung In Lee
- 기타저자
- Hyungjun Park
- 기타저자
- S.K.Dhungel
- 기타저자
- J.Yi
- 기타저자
- Ho-Kyoon Chung
- 기타저자
- Byong-Deog Choi
- 기타저자
- Ki-Young Lee
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60141678
MARC
008100819s2007 ulka a eng■022 ▼a03744884
■1001 ▼aSunghyun Hwang
■24510▼aProperties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications▼dSunghyun Hwang▼eSungwook Jung▼eKyung-Soo Jang▼eJeoung In Lee▼eHyungjun Park▼eS.K.Dhungel▼eJ.Yi▼eHo-Kyoon Chung▼eByong-Deog Choi▼eKi-Young Lee
■260 ▼a서울▼b한국물리학회▼c2007.
■300 ▼app. 1096-1099
■7001 ▼aSungwook Jung
■7001 ▼aKyung-Soo Jang
■7001 ▼aJeoung In Lee
■7001 ▼aHyungjun Park
■7001 ▼aS.K.Dhungel
■7001 ▼aJ.Yi
■7001 ▼aHo-Kyoon Chung
■7001 ▼aByong-Deog Choi
■7001 ▼aKi-Young Lee
■773 ▼tJournal of The Korean Physical Society▼gVol. 51 No. 3 (2007. 9)▼d2007, 09
■SIS ▼aS043255▼b60077342▼h8▼s2▼fP
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