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Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N...
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications

Detailed Information

Material Type  
 기사
ISSN  
03744884
Author  
Sunghyun Hwang
Title/Author  
Properties of the Ultra-Thin Silicon-Oxynitride Films Deposited by Using Plasma-Assisted N2O Oxidation for Semiconductor Device Applications / Sunghyun Hwang ; Sungwook Jung ; Kyung-Soo Jang ; Jeoung In Lee ; Hyungjun Park ; S.K.Dhungel ; J.Yi ; Ho-Kyoon Chung ; Byong-Deog Choi ; Ki-Young Lee
Publish Info  
서울 : 한국물리학회, 2007.
Material Info  
pp. 1096-1099
Added Entry-Personal Name  
Sungwook Jung
Added Entry-Personal Name  
Kyung-Soo Jang
Added Entry-Personal Name  
Jeoung In Lee
Added Entry-Personal Name  
Hyungjun Park
Added Entry-Personal Name  
S.K.Dhungel
Added Entry-Personal Name  
J.Yi
Added Entry-Personal Name  
Ho-Kyoon Chung
Added Entry-Personal Name  
Byong-Deog Choi
Added Entry-Personal Name  
Ki-Young Lee
Host Item Entry  
Journal of The Korean Physical Society : Vol. 51 No. 3 (2007. 9) 2007, 09
모체레코드  
모체정보확인
Control Number  
kjul:60141678

MARC

 008100819s2007        ulka    a                          eng
■022    ▼a03744884
■1001  ▼aSunghyun  Hwang
■24510▼aProperties  of  the  Ultra-Thin  Silicon-Oxynitride  Films  Deposited  by  Using  Plasma-Assisted  N2O  Oxidation  for  Semiconductor  Device  Applications▼dSunghyun  Hwang▼eSungwook  Jung▼eKyung-Soo  Jang▼eJeoung  In  Lee▼eHyungjun  Park▼eS.K.Dhungel▼eJ.Yi▼eHo-Kyoon  Chung▼eByong-Deog  Choi▼eKi-Young  Lee
■260    ▼a서울▼b한국물리학회▼c2007.
■300    ▼app.  1096-1099
■7001  ▼aSungwook  Jung
■7001  ▼aKyung-Soo  Jang
■7001  ▼aJeoung  In  Lee
■7001  ▼aHyungjun  Park
■7001  ▼aS.K.Dhungel
■7001  ▼aJ.Yi
■7001  ▼aHo-Kyoon  Chung
■7001  ▼aByong-Deog  Choi
■7001  ▼aKi-Young  Lee
■773    ▼tJournal  of  The  Korean  Physical  Society▼gVol.  51  No.  3  (2007.  9)▼d2007,  09
■SIS    ▼aS043255▼b60077342▼h8▼s2▼fP

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