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New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 서명/저자
- New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot / Kazunori Ichikawa. , Prakaipetch Punchaipetch , Hiroshi Yano , Tomoaki Hatayama , Yukiharu Uraoka , Takashi Fuyuki , Atsushi Tomyo , Eiji Takahashi , Tsukasa Hayashi , Kiyoshi Ogata.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 569-576
- 키워드
- NEW FABRICATION TECHNIQUE USING SIDEWALLTYPE PLASMAENHANCED CHEMICALVAPOR DEPOSITION FLOATING GATE MEMORY NANODOT
- 기타저자
- Hiroshi Yano
- 기타저자
- Tomoaki Hatayama
- 기타저자
- Yukiharu Uraoka
- 기타저자
- Takashi Fuyuki
- 기타저자
- Atsushi Tomyo
- 기타저자
- Eiji Takahashi
- 기타저자
- Tsukasa Hayashi
- 기타저자
- Kiyoshi Ogata.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097769
MARC
008070418s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aKazunori Ichikawa.
■245 ▼aNew Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot ▼dKazunori Ichikawa. ▼ePrakaipetch Punchaipetch▼eHiroshi Yano▼eTomoaki Hatayama▼eYukiharu Uraoka▼eTakashi Fuyuki▼eAtsushi Tomyo▼eEiji Takahashi▼eTsukasa Hayashi▼eKiyoshi Ogata.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 569-576
■653 ▼aNEW▼aFABRICATION▼aTECHNIQUE▼aUSING▼aSIDEWALLTYPE▼aPLASMAENHANCED▼aCHEMICALVAPOR▼aDEPOSITION▼aFLOATING▼aGATE▼aMEMORY▼aNANODOT
■7001 ▼aPrakaipetch Punchaipetch
■7001 ▼aHiroshi Yano
■7001 ▼aTomoaki Hatayama
■7001 ▼aYukiharu Uraoka
■7001 ▼aTakashi Fuyuki
■7001 ▼aAtsushi Tomyo
■7001 ▼aEiji Takahashi
■7001 ▼aTsukasa Hayashi
■7001 ▼aKiyoshi Ogata.
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 2 (2006. 8)▼d2006, 08
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028785▼b60077342▼h8▼s2
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