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Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas
Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas
Detailed Information
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- C. J. Chung.
- 서명/저자
- Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas / C. J. Chung. , T. H. Chung , M. S. Kang , Y. Kim.
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 162-166
- 키워드
- ELECTRICAL OPTICAL PROPERTIES NITROGENINCORPORATED SILICONOXIDE FILMS USING PLASMAENHANCED CHEMICALVAPOR DEPOSITION TETRAMETHOXYSILANE N₂ONH₃ GAS
- 기타저자
- T. H. Chung
- 기타저자
- M. S. Kang
- 기타저자
- Y. Kim.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097453
MARC
008070417s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aC. J. Chung.
■245 ▼aElectrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N₂O/NH₃ Gas ▼dC. J. Chung. ▼eT. H. Chung▼eM. S. Kang▼eY. Kim.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 162-166
■653 ▼aELECTRICAL▼aOPTICAL▼aPROPERTIES▼aNITROGENINCORPORATED▼aSILICONOXIDE▼aFILMS▼aUSING▼aPLASMAENHANCED▼aCHEMICALVAPOR▼aDEPOSITION▼aTETRAMETHOXYSILANE▼aN₂ONH₃▼aGAS
■7001 ▼aT. H. Chung
■7001 ▼aM. S. Kang
■7001 ▼aY. Kim.
■773 ▼tJournal of The Korean Physical Society▼gVol. 49 No. 1 (2006. 7)▼d2006, 07
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028404▼b60077342▼h8▼s2
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