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Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique
Detailed Information
- Material Type
- 기사
- ISSN
- 03744884
- Author
- Wonjoon Choi.
- Title/Author
- Analysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique / Wonjoon Choi. ; Jonghyun Lee ; Jungyup Yang ; Chaeok Kim ; Jinpyo Hong ; Tschang-uh Nahm ; Byungsub Byun ; Moseok Kim.
- Publish Info
- 서울 : 한국물리학회, 2006.
- Material Info
- pp. 1666-1669
- Index Term-Uncontrolled
- ANALYSIS CHEMICAL BOND STATES ELECTRICAL PROPERTIES STACKED ALONHFO₂ GATE OXIDES FORMED USING LAYERBYLAYER TECHNIQUE
- Added Entry-Personal Name
- Jonghyun Lee
- Added Entry-Personal Name
- Jungyup Yang
- Added Entry-Personal Name
- Chaeok Kim
- Added Entry-Personal Name
- Jinpyo Hong
- Added Entry-Personal Name
- Tschang-uh Nahm
- Added Entry-Personal Name
- Byungsub Byun
- Added Entry-Personal Name
- Moseok Kim.
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60097212
MARC
008070413s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aWonjoon Choi.
■245 ▼aAnalysis of Chemical Bond States and Electrical Properties of Stacked AlON/HfO₂ Gate Oxides Formed by Using a Layer-by-Layer Technique ▼dWonjoon Choi. ▼eJonghyun Lee▼eJungyup Yang▼eChaeok Kim▼eJinpyo Hong▼eTschang-uh Nahm▼eByungsub Byun▼eMoseok Kim.
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 1666-1669
■653 ▼aANALYSIS▼aCHEMICAL▼aBOND▼aSTATES▼aELECTRICAL▼aPROPERTIES▼aSTACKED▼aALONHFO₂▼aGATE▼aOXIDES▼aFORMED▼aUSING▼aLAYERBYLAYER▼aTECHNIQUE
■7001 ▼aJonghyun Lee
■7001 ▼aJungyup Yang
■7001 ▼aChaeok Kim
■7001 ▼aJinpyo Hong
■7001 ▼aTschang-uh Nahm
■7001 ▼aByungsub Byun
■7001 ▼aMoseok Kim.
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 6 (2006. 6)▼d2006, 06
■URL ▼ahttp://www.kps.or.kr
■SIS ▼aS028403▼b60077342▼h8▼s2
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