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Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
상세정보
- 자료유형
- 기사
- ISSN
- 03744884
- 저자명
- Koo, Jaehyoung
- 서명/저자
- Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method / Jaehyoung Koo 저 , Seokhoon Kim , Sangmin Jeon , Hyeongtag Jeon , Yangdo Kim , Youngdo Won 공저
- 발행사항
- 서울 : 한국물리학회, 2006.
- 형태사항
- pp. 131-136
- 키워드
- CHARACTERISTICS AL₂O₃ FILMS DEPOSITED USING DIMETHYLALUMINUM ISOPROPOXIDE TRIMETHYLALUMINUM PRECURSORS PLASMAENHANCED ATOMICLAYER DEPOSITION METHOD
- 기타저자
- Kim, Seokhoon
- 기타저자
- Jeon, Sangmin
- 기타저자
- Jeon, Hyeongtag
- 기타저자
- Kim, Yangdo
- 기타저자
- Won, Youngdo
- Control Number
- kjul:60096531
MARC
008070404s2006 ULKa a ENG■022 ▼a03744884
■1001 ▼aKoo, Jaehyoung
■245 ▼aCharacteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method▼dJaehyoung Koo 저▼eSeokhoon Kim▼eSangmin Jeon▼eHyeongtag Jeon▼eYangdo Kim▼eYoungdo Won 공저
■260 ▼a서울▼b한국물리학회▼c2006.
■300 ▼app. 131-136
■653 ▼aCHARACTERISTICS▼aAL₂O₃▼aFILMS▼aDEPOSITED▼aUSING▼aDIMETHYLALUMINUM▼aISOPROPOXIDE▼aTRIMETHYLALUMINUM▼aPRECURSORS▼aPLASMAENHANCED▼aATOMICLAYER▼aDEPOSITION▼aMETHOD
■7001 ▼aKim, Seokhoon
■7001 ▼aJeon, Sangmin
■7001 ▼aJeon, Hyeongtag
■7001 ▼aKim, Yangdo
■7001 ▼aWon, Youngdo
■773 ▼tJournal of The Korean Physical Society▼gVol. 48 No. 1 (2006. 1)▼d2006, 01
■■URL ▼ahttp://www.kps.or.kr
