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Studies on Al₂O₃/ZrO₂/Al₂O₃High K Gate Dielectrics Applied in a Fully Depleted SOI MOSFET
Studies on Al₂O₃/ZrO₂/Al₂O₃High K Gate Dielectrics Applied in a Fully Depleted SOI MOSFET
Detailed Information
- Material Type
- 기사
- ISSN
- 12259438
- Title/Author
- Studies on Al₂O₃/ZrO₂/Al₂O₃High K Gate Dielectrics Applied in a Fully Depleted SOI MOSFET / 공저 Chenglu Lin, Ninglin Zhang, Qinwo Shen
- Publish Info
- 서울 : 대한금속.재료학회, 2004.
- Material Info
- pp. 475-478
- Index Term-Uncontrolled
- STUDIES AL₂O₃ZRO₂AL₂O₃HIGH GATE DIELECTRICS APPLIED FULLY DEPLETED SOI MOSFET
- Added Entry-Personal Name
- Chenglu Lin, Ninglin Zhang, Qinwo Shen
- Host Item Entry
- Metals and Materials : VOL.10 NO.5 (2004 OCTOBER) 2004, 10
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60055294
MARC
008050913s2004 ULKa a ENG■022 ▼a12259438
■245 ▼aStudies on Al₂O₃/ZrO₂/Al₂O₃High K Gate Dielectrics Applied in a Fully Depleted SOI MOSFET▼d공저 Chenglu Lin, Ninglin Zhang, Qinwo Shen
■260 ▼a서울▼b대한금속.재료학회▼c2004.
■300 ▼app. 475-478
■653 ▼aSTUDIES▼aAL₂O₃ZRO₂AL₂O₃HIGH▼aGATE▼aDIELECTRICS▼aAPPLIED▼aFULLY▼aDEPLETED▼aSOI▼aMOSFET
■700 ▼aChenglu Lin, Ninglin Zhang, Qinwo Shen
■773 ▼tMetals and Materials▼gVOL.10 NO.5 (2004 OCTOBER)▼d2004, 10
■SIS ▼aS010856▼b60013551▼h1▼s2▼fP
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