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A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
Detailed Information
- 자료유형
- 기사
- ISSN
- 12259438
- 서명/저자
- A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing / 공저 Zhihong Liu, Changchun Chen, Wentao Huang
- 발행사항
- 서울 : 대한금속.재료학회, 2004.
- 형태사항
- pp. 285-288
- 키워드
- STUDY STRAIN STABILITY SISIGE LAYER STRUCTURE HETEROJUNCTION BIPOLAR TRANSISTOR THERMAL PROCESSING
- 모체레코드
- 모체정보확인
- Control Number
- kjul:60046296
MARC
008050728s2004 ULKa a ENG■022 ▼a12259438
■245 ▼aA Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing▼d공저 Zhihong Liu, Changchun Chen, Wentao Huang
■260 ▼a서울▼b대한금속.재료학회▼c2004.
■300 ▼app. 285-288
■653 ▼aSTUDY▼aSTRAIN▼aSTABILITY▼aSISIGE▼aLAYER▼aSTRUCTURE▼aHETEROJUNCTION▼aBIPOLAR▼aTRANSISTOR▼aTHERMAL▼aPROCESSING
■700 ▼aZhihong Liu, Changchun Chen, Wentao Huang
■773 ▼tMetals and Materials▼gVOL.10 NO.3 (2004 JUNE)▼d2004, 06
■SIS ▼aS010721▼b60013551▼h8▼s2
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