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11
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
Barrier Property of a TiN Layer Prepared by Using Flow Modulation CVD for Cu Metallization
N. I. Cho., | 한국물리학회 | 2006 ,
12
Hydrothermal Reaction for the Preparation of La0.7Ca0.3MnO₃ and La0.7Sr0.3MnO₃
Hydrothermal Reaction for the Preparation of La0.7Ca0.3MnO₃ and La0.7Sr0.3MnO₃
Sang M. Lee., | 한국물리학회 | 2006 ,
13
Optimization of a Preamplifier with Low Input-Bias Current for Operating Double Relaxation Oscillation SQUIDs(DROSs)
Optimization of a Preamplifier with Low Input-Bias Current for Operating Double Relaxation Oscillation SQUIDs(DROSs)
Jin-mok Kim., | 한국물리학회 | 2006 ,
14
Effects of the Top-Electrode Preparation Method on the Ferroelectric Properties of Pt/Pb(Zr, Ti)O₂/Pt Thin Film Capacitors
Effects of the Top-Electrode Preparation Method on the Ferroelectric Properties of Pt/Pb(Zr, Ti)O₂/Pt Thin Film Capacitors
Eun Gu Lee., | 한국물리학회 | 2006 ,
15
Coercivity of the Co-Precipitated Prepared Haxaferrites, BaFe12-2x CoxSnxO19
Coercivity of the Co-Precipitated Prepared Haxaferrites, BaFe12-2x CoxSnxO19
Siriphan Nilpairach., | 한국물리학회 | 2006 ,
16
Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Physical and Electrical Characteristics of Atomic-Layer-Deposited Hf-Silicate Thin Films Using Hf[N(CH₃)(C₂H5)]₄ and SiH[N(CH₃)₂]₃ Precursors
Chung, K. B., | 한국물리학회 | 2006 ,
17
Modifications of the Biot and the MBA Models for Predicting the Anisotropic Phase Velocity in Cancellous Bone
Modifications of the Biot and the MBA Models for Predicting the Anisotropic Phase Velocity in Cancellous Bone
Lee, Kang Il, | 한국물리학회 | 2006 ,
18
The Effect of the Partial Pressure of H₂ Gas and Atomic Hydrogen on Diamond Films Deposited Using CH₃OH/H₂O Gas
The Effect of the Partial Pressure of H₂ Gas and Atomic Hydrogen on Diamond Films Deposited Using CH₃OH/H₂O Gas
Lee, Kwon-jai, | 한국물리학회 | 2006 ,
19
Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Characteristics of Al₂O₃ Thin Films Deposited Using Dimethylaluminum Isopropoxide and Trimethylaluminum Precursors by the Plasma-Enhanced Atomic-Layer Deposition Method
Koo, Jaehyoung, | 한국물리학회 | 2006 ,
20
Modeling and Multivariable Control of a Novel Multi-Dimensional Levitated Stage with High Precision
Modeling and Multivariable Control of a Novel Multi-Dimensional Levitated Stage with High Precision
Tiejun Hu., | 제어자동화시스템공학회 | 2006 ,
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