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1 Results:UU:VOLUME3NUMBER32003SEPTEMBER PP:대한전자공학회 AA:H.T.KIM 0.15 sec.
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Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
Electrical Characteristics of InA1As/InGaAs/InA1As Pseudomorphic High Electron Mobility Transistors under Sub-Bandgap Photonic Excitation
H.T.Kim, | 대한전자공학회 | 2003 ,
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