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8 Results:UU:VOLUME2NUMBER32002SEPTEMBER PP:대한전자공학회 0.46 sec.
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1
Optiμm Design of the Interdigitated CB Structure
Optiμm Design of the Interdigitated CB Structure
qiang , Yang-Hong, | 대한전자공학회 | 2002 ,
2
Virtual ground monitoring for high fault coverage of linear analog circuits
Virtual ground monitoring for high fault coverage of linear analog circuits
Roh , Jeongjin, | 대한전자공학회 | 2002 ,
3
Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Device characterization and Fabrication Issues for Ferroelectric Gate Field Effect Transistor Device
Yu , Byoung-Gon, | 대한전자공학회 | 2002 ,
4
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Park , Wanjun, | 대한전자공학회 | 2002 ,
5
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Kim , Chang-Shuk, | 대한전자공학회 | 2002 ,
6
A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation
A Novel Sensing Circuit for 2T-2MTJ MRAM Applicable to High Speed Synchronous Operation
Jang , Eun-Jung, | 대한전자공학회 | 2002 ,
7
Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory
Field Effect Transistor of Vertically Stacked, Self-assembled InAs Quantum Dots with Nonvolatile Memory
Li , Shuwei, | 대한전자공학회 | 2002 ,
8
Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick SiO_2 Film
Aspects of Hard Breakdown Characteristics in a 2.2-nm-thick SiO_2 Film
Komiya , Kenji, | 대한전자공학회 | 2002 ,
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