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9 Results:UU:VOL7NO12006FEBRUARY 0.62 sec.
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1
Nano-granular Co-Fe-Al-O Soft Ferromagnetic Thin Films for RF Electromagnetic-noise Filters
Nano-granular Co-Fe-Al-O Soft Ferromagnetic Thin Films for RF Electromagnetic-noise Filters
Jae Cheon Sohn, | 한국전기전자재료학회 | 2007 ,
2
Time Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD
Time Evolution of a High temperature GaN Epilayer Grown on a Low-temperature GaN Buffer Layer using a Low-pressure MOCVD
Kyunghwa Chang, | 한국전기전자재료학회 | 2007 ,
3
Motion of Charged Micro-particle Immersed in Liquid Crystal Controlled by In-Plane Field for Electro Paper Display
Motion of Charged Micro-particle Immersed in Liquid Crystal Controlled by In-Plane Field for Electro Paper Display
In Su Baik, | 한국전기전자재료학회 | 2007 ,
4
Precursor Process Designing to Synthesize Nano-sized Phosphors
Precursor Process Designing to Synthesize Nano-sized Phosphors
Soo Jong Kim, | 한국전기전자재료학회 | 2007 ,
5
LC Aligning Properties for Homeotropic Alignment of NLC on the SiOх Thin Film as Incident Angle of Electron Beam Evaporation Angle
LC Aligning Properties for Homeotropic Alignment of NLC on the SiOх Thin Film as Incident Angle of Electron Beam Evaporation Angle
Jong-Hwan Kim, | 한국전기전자재료학회 | 2007 ,
6
Improvement of Interfacial Performances on Insulating and Semi-Conducting Silicone Polymer Joint by Plasma-treatment
Improvement of Interfacial Performances on Insulating and Semi-Conducting Silicone Polymer Joint by Plasma-treatment
Ki Taek Lee, | 한국전기전자재료학회 | 2007 ,
7
Ferromagnetic Properties in Diluted Magnetic Semiconductors (Al,Min)N grown by PEMBE
Ferromagnetic Properties in Diluted Magnetic Semiconductors (Al,Min)N grown by PEMBE
Moon Ho Ham, | 한국전기전자재료학회 | 2007 ,
8
Electrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory
Electrical Switching Characteristics of Ge₁Se₁Te₂Chalcogenide Thin Film for Phase Change Memory
Jae-Min Lee, | 한국전기전자재료학회 | 2007 ,
9
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
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