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1
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Nonvolatile Memory Characteristics in Metal-Oxide-Semiconductors Containing Metal Nanoparticles Fabricated by Using a Unique Laser Irradiation Method
Jungyup Yang., | 한국물리학회 | 2006 ,
2
Magnetocapacitance in Metal-Oxide-Metal Junction System
Magnetocapacitance in Metal-Oxide-Metal Junction System
Kim, Kyoo, | 한국물리학회 | 2006 ,
3
Atomic Layer Deposition of Ultrathin Metal-Oxide Films for Nano-Scale Device Applications
Atomic Layer Deposition of Ultrathin Metal-Oxide Films for Nano-Scale Device Applications
Kim, Hyongsub, | 한국물리학회 | 2006 ,
4
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
DC Characteristics of P-Channel Metal-Oxide-Semiconductor Field Effect Transistors with Sio.88 Geo.¹²(C) Heterostructure Channel
Sang Sik Choi., | 대한전자공학회 | 2006 ,
5
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
6
MOS (metal oxide semiconductor) physics and technology
MOS (metal oxide semiconductor) physics and technology
Nicollian, E. H., 569.8-N646m | Wiley-Interscience | 2003 569.8-N646m,
7
아날로그 CMOS 집적회로 설계
아날로그 CMOS 집적회로 설계
라자비, 버자드, 569.8-라72아 | 한빛미디어 | 2009 569.8-라72아,
8
CMOS circuit design for RF sensors
CMOS circuit design for RF sensors
Gudnason, Gunnar., 569.3-G923c | Kluwer Academic | 2002 569.3-G923c,
9
Design of analog CMOS integrated circuits
Design of analog CMOS integrated circuits
Razavi, Behzad., 569.9-R278d | McGraw-Hill | 2000 569.9-R278d,
10
Device modeling for analog and RF CMOS circuitdesign
Device modeling for analog and RF CMOS circuitdesign
Ytterdal, Trond, 566.36-Y93d | Wiley | 2003 566.36-Y93d,
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