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1
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
2
HBM ESD 현상의 혼합모드 과도해석
HBM ESD 현상의 혼합모드 과도해석
최진영, 송광섭, | 대한전자공학회 | 2001 ,
처음1마지막
1
Annual Report to Congress: The Military Power of the People's Republic of China 2005
United States Department of Defense [, ]
2
Anuario Filosofico
Servicio de Publicaciones de la Universidad de Navarra, S.A. [, ]
3
Creditor Reporting System on Aid Activities -- Systeme de notification des pays creanciers sur les activites d'aide
Organisation for Economic Cooperation & Development [, ]
4
Diabetes Dateline
National Diabetes Information Clearinghouse [, ]
5
DOMES: Digest of Middle East Studies
Global Information Company [, ]
6
Mobility Forum: The Journal of the Air Mobility Command's Magazine
United States Department of Defense [, ]
7
My Confession (Atrocities During the Mexican/American War)
Great Neck Publishing [, ]
8
Scientific Papers: Series D, Animal Science - The International Session of Scientific Communications of the Faculty of Animal Science
University of Agricultural Sciences & Veterinary Medicine, Faculty of Animal Science [, ]
9
Strategy for Homeland Defense & Civil Support
United States Department of Defense [, ]