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1
Mutual Detectability and System Enlargement of Detection Filters: An Invariant Zero Approach
Mutual Detectability and System Enlargement of Detection Filters: An Invariant Zero Approach
Yongmin Kim, | 제어자동화시스템공학회 | 2006 ,
2
A Realization of Reduced-Order Detection Filters
A Realization of Reduced-Order Detection Filters
Yongmin Kim, | 제어자동화시스템공학회 | 2008 ,
3
Segmentation of Liver Regions in the Abdominal CT Image by Multi-threshold and Watershed Algorithm
Segmentation of Liver Regions in the Abdominal CT Image by Multi-threshold and Watershed Algorithm
Pil Un Kim, | 한국멀티미디어학회 | 2006 ,
4
Synthesis and Magnetic Relaxation Properties of Paramagnetic Gd-complexes of New DTPA-bis-amides. The X-ray Crystal Structure of [Gd(L)(H2O)]·3H2O (L = DTPA-bis(4-carboxylicphenyl)amide)
Synthesis and Magnetic Relaxation Properties of Paramagnetic Gd-complexes of New DTPA-bis-amides. The X-ray Crystal Structure of [Gd(L)(H2O)]·3H2O (L = DTPA-bis(4-carboxylicphenyl)amide)
Dutta, Sujit, | 대한화학회 | 2006 ,
5
Time-Integrated and Time-Resolved Photoluminescence Properties of Si Nanocrystal/SiO₂ Multilayers Grown by Ion-Beam Sputtering
Time-Integrated and Time-Resolved Photoluminescence Properties of Si Nanocrystal/SiO₂ Multilayers Grown by Ion-Beam Sputtering
Sung Kim, | 한국물리학회 | 2007 ,
6
Photoluminescence Characterization of Dependence of Si-Nanocrystals Formation in Si-Rich Sioχ on Thickness. Oxygen Content, and the Existence of a SiO₂ Cap Layer
Photoluminescence Characterization of Dependence of Si-Nanocrystals Formation in Si-Rich Sioχ on Thickness. Oxygen Content, and the Existence of a SiO₂ Cap Layer
Min Choul Kim, | 한국물리학회 | 2007 ,
7
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Temperature-Lowering-Induced Enhancement of Ballistic Transport in a 100-nm Γ-gate AlGaAs/InGaAs Pseudomorphic HEMT
Nambin Kim, | 한국물리학회 | 2006 ,
8
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Kyooho Jung, | 한국물리학회 | 2006 ,
9
Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films
Temperature Dependence of Resistance Switching in Cr Doped SrZrO3 Thin Films
Mooyoung Kim, | 한국물리학회 | 2007 ,
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