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1
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Quantitative Analysis on Voltage Schemes for Reliable Operations of a Floating Gate Type Double Gate Nonvolatile Memory Cell
Seongjae Cho, | 대한전자공학회 | 2005 ,
2
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Byoungchul Park, | 한국물리학회 | 2007 ,
3
Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljon, | 대한전자공학회 | 2006 ,
4
Numerical Investigation of Cross-Flow Around a Circular Cylinder at a Low-Reynolds Number Flow Under an Electromagnetic Force
Numerical Investigation of Cross-Flow Around a Circular Cylinder at a Low-Reynolds Number Flow Under an Electromagnetic Force
Seong-Jae Kim,Choung Mook Lee, | 대한기계학회 | 2002 ,
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