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New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
New Fabrication Technique Using Side-Wall-Type Plasma-Enhanced Chemical-Vapor Deposition for a Floating Gate Memory with a Si Nanodot
Kazunori Ichikawa., | 한국물리학회 | 2006 ,
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