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1
Growth and Ion Balance of Carnation under Salt Stress
Growth and Ion Balance of Carnation under Salt Stress
Oh Keun Kwon, | 한국원예학회 | 2005 ,
2
Production of Compact Ardisia pusilla DC. Pot Plant by Using Paclobutrazol
Production of Compact Ardisia pusilla DC. Pot Plant by Using Paclobutrazol
Chang Hee Lee, Oh Keun Kwon, | 한국원예학회 | 2004 ,
3
Pot Plants Production of Multiple-Branched Ardisia pusilla as Influenced by 6- Benzylaminopurine Related to Spray Time after Pinching
Pot Plants Production of Multiple-Branched Ardisia pusilla as Influenced by 6- Benzylaminopurine Related to Spray Time after Pinching
Chang Hee Lee, | 한국원예학회 | 2006 ,
4
Rooting Characteristics of Stem Tip Cuttings in Ardisia pusilla as Influenced by Cutting Stage, Rooting Medium, Temperature, and Plant Growth Regulator Pretreatment
Rooting Characteristics of Stem Tip Cuttings in Ardisia pusilla as Influenced by Cutting Stage, Rooting Medium, Temperature, and Plant Growth Regulator Pretreatment
Chang Hee Lee, | 한국원예학회 | 2005 ,
5
Electrostatically Actuated Oscillator of Bundle and Double-Walled Carbon Nanotubes
Electrostatically Actuated Oscillator of Bundle and Double-Walled Carbon Nanotubes
Jeong Won Kang, | 한국물리학회 | 2006 ,
6
Electrostatically Actuated Oscillator of Bundle and Double-Walled Carbon Nanotubes
Electrostatically Actuated Oscillator of Bundle and Double-Walled Carbon Nanotubes
Kang, Jeong Won, | 한국물리학회 | 2006 ,
7
Pot Plants Production of Multiple-Branched Ardisia pusilla as Influenced by 6-Benzylaminopurine Related to Spray Time after Pinching
Pot Plants Production of Multiple-Branched Ardisia pusilla as Influenced by 6-Benzylaminopurine Related to Spray Time after Pinching
Lee, Chang Hee, | 한국원예학회 | 2006 ,
8
N-(2-Chloro-4-phridyl)-N'-phenylurea Promotes Fruit Set of Ardisia pusilla
N-(2-Chloro-4-phridyl)-N'-phenylurea Promotes Fruit Set of Ardisia pusilla
Chang Hee Lee, | 한국원예학회 | 2006 ,
9
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
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