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2 Results:AA:MOONGYU JANG AA:MOONGYU JANG, YARKYEON KIM, MYUNGSIM JUN, CHELJON 0.187 sec.
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Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Characteristics of n-Type SB-MOSFETs Manufactured by Using a Metal-Gate & a High-K Dielectric
Byoungchul Park, | 한국물리학회 | 2007 ,
2
Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Schottky Barrier MOSFEETs with High Current Drivability for Nano-regime Applications
Moongyu Jang, Yarkyeon Kim, Myungsim Jun, Cheljon, | 대한전자공학회 | 2006 ,
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