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Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
Metal-Organic Chemical Vapor Deposition of Pb(ZrxTi1-x)O3 Thin Films for High-Density Ferroelectric Random Access Memory Application
June Key Lee, | 대한전자공학회 | 2002 ,
2
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Comparison of Retention Characteristics of Ferroelectric Capacitors with Pb(Zr,Ti)O3 Films Deposited by various Methods for High-density Non-volatile Memory
Sangmin Shin, | 대한전자공학회 | 2003 ,
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