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1
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
Electron Behavior and Impurity Properties as Functions of Growth Temperature for InN Grown by Using Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
2
Correlation Between Yellow Emission and Misoriented Structure in GaN Epilayers
Correlation Between Yellow Emission and Misoriented Structure in GaN Epilayers
O. H. Cha, | 한국물리학회 | 2006 ,
3
Photocurrent Spectroscopy Investigations of Mg-Related Defect Levels in p-Type GaN
Photocurrent Spectroscopy Investigations of Mg-Related Defect Levels in p-Type GaN
S. J. Chung, | 한국물리학회 | 2006 ,
4
Electron Transpotr in InN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
Electron Transpotr in InN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
E. S. Hwang, | 한국물리학회 | 2006 ,
5
Characteristics of p-Type GaN Formed by Two Different Types of Mg Diffusion
Characteristics of p-Type GaN Formed by Two Different Types of Mg Diffusion
S. J. Chung., | 한국물리학회 | 2006 ,
6
Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
B. Karunagaran., | 한국물리학회 | 2006 ,
7
Photocurrent Spectroscopy Investigations of Mg-Related Defect levels in p-type GaN
Photocurrent Spectroscopy Investigations of Mg-Related Defect levels in p-type GaN
Chung, S. J., | 한국물리학회 | 2006 ,
8
Electron Transport in InN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
Electron Transport in InN Layers Grown by Plasma-Assisted Molecular Beam Epitaxy
Hwang, E. S., | 한국물리학회 | 2006 ,
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