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1
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Trade-off Characteristic between Gate Length Margin and Hot Carrier Lifetime by Considering ESD on NMOSFETs of Submicron Technology
Bong-Kyu Joung, | 한국전기전자재료학회 | 2007 ,
2
(빌 게이츠의) 인생수업 : 빌 게이츠의 성공 뒤에는 아버지가 있었다
(빌 게이츠의) 인생수업 : 빌 게이츠의 성공 뒤에는 아버지가 있었다
푸허녠., 325.04-푸94이 | 이스트북스 | 2007 325.04-푸94이,
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