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1
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Novel Properties of Erbium-Silicided N-Type Schottky Barrier Metal-Oxide -Semiconductor Field-Effect Transistors
Moongyu Jang, Yakyeon Kim, Jaeheon Shin, Seongjae, | 대한전자공학회 | 2004 ,
2
A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
A Study on the Strain Stability of Si/SiGe Layer Structure in a Heterojunction Bipolar Transistor during Thermal Processing
Zhihong Liu, Changchun Chen, Wentao Huang, | 대한금속.재료학회 | 2004 ,
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