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High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
High Quality Partially Relaxed SiGe Film Grown on Silicon-on-Insulator Substrate by Ultra-High Vacuum Chemical Vapor Deposition
Changchun Chen, Wentao Huang, Zhihiog Liu, | 대한금속.재료학회 | 2004 ,
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True Interest of America Impartially Stated
Great Neck Publishing [, ]