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2 Results:AA:PARK WANJUN AA:WANJUN PARK AA:PARK , WANJUN 0.124 sec.
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Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology of MRAM (Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Park , Wanjun, | 대한전자공학회 | 2002 ,
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Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Technology MRAM(Magneto-resistive Random Access Memory) Using MTJ(Magnetic Tunnel Junction) Cell
Wanjun Park, | 대한전자공학회 | 2002 ,
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