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1000 Results:AA:SUNG H C 0.494 sec.
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971
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Device Characteristics of A1GaN/GaN MIS-HFET using A12O3 Based High-k Dielectric
Ki-Yeol Park, | 대한전자공학회 | 2005 ,
972
ViP: A Practical Approach to Platform-based System Modeling Methodology
ViP: A Practical Approach to Platform-based System Modeling Methodology
Junhyung Um, SungPack Hong, Young-Taek Kim, Eui-y, | 대한전자공학회 | 2005 ,
973
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
V-band Self-heterodyne Wireless Transceiver using MMIC Modules
Dan An, Mun-Kyo Lee, Sang-Jin Lee, Du-Hyun Ko, Ji, | 대한전자공학회 | 2005 ,
974
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Device Characterization and Fabrication issues for Ferroelectric Gate Field Effect Transistor Device
Byoung-Gon Yu, | 대한전자공학회 | 2002 ,
975
MRAM Technology for High Density Memory Application
MRAM Technology for High Density Memory Application
Chang-Shuk Kim, | 대한전자공학회 | 2002 ,
976
Fabrication of 3D Microstructures with Single uv Lithography Step
Fabrication of 3D Microstructures with Single uv Lithography Step
Man Hee Han, | 대한전자공학회 | 2002 ,
977
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
40nm InGaAs HEMT's with 65% Strained Channel Fabricated with Damage-Free SiO2/SiNx Side-wall Gate Process
Dae-Hyun Kim, | 대한전자공학회 | 2003 ,
978
High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
High Conversion Gain Q-band Active Sub-harmonic Mixer Using GaAs PHEMT
Won-Young Uhm, | 대한전자공학회 | 2003 ,
979
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Flowable Oxide CVD Process for Shallow Trench Isolation in Silicon Semiconductor
Sung-Woong Chung, | 대한전자공학회 | 2004 ,
980
See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb
See-saw Type RF MEMS Switch with Narrow Gap Vertical Comb
Sungchan Kang, | 대한전자공학회 | 2007 ,
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