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961
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Phase Transition Characteristics of Nitrogen-Doped Antimony-Telluride (N-Sb₂Te₃) Thin Films for a Phase Change Random Access Memory
Jin Ho Oh, | 한국물리학회 | 2006 ,
962
Characterization of Bulk Metallic Contamination in Epitaxial Wafers
Characterization of Bulk Metallic Contamination in Epitaxial Wafers
Sangwook Wee, | 한국물리학회 | 2006 ,
963
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Electrical and Optical Properties of a n-Type ZnO Thin Film Deposited on a Si Substrate by Using a Double RF Co-Sputtering Method
Jonghyun Lee, | 한국물리학회 | 2006 ,
964
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Temperature-Dependent Switching Current of Cr-Doped SrZrO₃/SrRuO₃Deposited for ReRAM Applications by Using PLD
Kyooho Jung, | 한국물리학회 | 2006 ,
965
White Polymer Light-Emitting Diode Based on Polymer Blending
White Polymer Light-Emitting Diode Based on Polymer Blending
Yong Kyun Lee, | 한국물리학회 | 2006 ,
966
Half-Metallicity of (MnSb)₁/(GaSb)n(n=1,3,5, and 7) Digital Alloys : First-Principles Calculations
Half-Metallicity of (MnSb)₁/(GaSb)n(n=1,3,5, and 7) Digital Alloys : First-Principles Calculations
Won Seok Yun, | 한국물리학회 | 2006 ,
967
The Elastic Property of a Single DNA Molecule Cross-Linked by Cisplatin : a Magnetic Tweezers Study
The Elastic Property of a Single DNA Molecule Cross-Linked by Cisplatin : a Magnetic Tweezers Study
Jin-sung Park, | 한국물리학회 | 2006 ,
968
Structural Properties of CrN Buffers for GaN Growth
Structural Properties of CrN Buffers for GaN Growth
W. H. Lee, | 한국물리학회 | 2006 ,
969
ProPerties of Organic Thin-film Transistors on Hybrid-Type Interlayer Dieledtric Materials
ProPerties of Organic Thin-film Transistors on Hybrid-Type Interlayer Dieledtric Materials
Teresa Oh, | 한국물리학회 | 2006 ,
970
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Selective Epitaxial Growth of SiGe on a SOI Substrate by Using Ultra-High-Vacuum Chemical Vapor Deposition
Hoon Choi, | 한국물리학회 | 2006 ,
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